unisonic technologies co., ltd 2sa733 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r206-068,d low frequency amplifier pnp epitaxial silicon transistor ? description the utc 2sa733 is a low frequency amplifier. ? features * collector-emitter voltage: bv cbo =-50v * collector current up to -150ma * high h fe linearity * complimentary to 2sc945 sot-323 1 2 3 sot-23 1 2 3 to-92 1 ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing 2sa733-x-ae3-r 2sa733l-x-ae3-r 2SA733G-X-AE3-R sot-23 e b c tape reel 2sa733-x-al3-r 2sa733l-x-al3-r 2sa733g-x-al3-r sot-323 e b c tape reel 2sa733-x-t92-b 2sa733l-x-t92-b 2sa733g-x-t92-b to-92 e c b tape box 2sa733-x-t92-k 2sa733l-x-t92-k 2sa733g-x-t92-k to-92 e c b bulk ? marking (for sot package)
2sa733 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r206-068,d ? absolute maximum rating (ta=25 , unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v sot-23/sot-323 250 mw collector dissipation to-92 p c 1 w collector current i c -150 ma junction temperature t j 125 storage temperature t stg -55 ~ +150 note:1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100 a, i e =0 -60 v collector-emitter breakdown voltage bv ceo i c =-10ma, i b =0 -50 v collector-emitter satu ration voltage v ce(sat) i c =-100ma, i b =-10ma -0.1 -0.3 v collector cut-off current i cbo v cb =-40v, i e =0 -100 na emitter cut-off current i ebo v eb =-3v, i c =0 -100 na dc current gain h fe v ce =-6v, i c =-1ma 90 600 current gain bandwidth product f t v ce =-10v, i c =-50ma 100 190 mhz output capacitance cob v cb =-10v, i e =0, f=1mhz 2.0 3.0 pf noise figure nf i c =-0.1ma, v ce =-6v r g =10k , f=100hz 4.0 6.0 db ? classification of h fe rank r q p k range 90-180 135-270 200-400 300-600
2sa733 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r206-068,d ? typical characteristics collector current, i c (ma) dc current gain, h fe collector current, i c (ma) saturation voltage (mv) current gain-bandwidth product, f t (mhz) capacitance, cob (pf)
2sa733 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r206-068,d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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